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Investigation of “benign” ionic content in epoxy that induces microelectronic device failureAuthor(s): Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch
Source: Proceedings of the 34th annual meeting of the Adhesion Society, 2011 February 13-16, Savannah, GA. Blacksburg, VA : The Adhesion Society, 2011: 3 p.
Publication Series: Paper (invited, offered, keynote)
PDF: Download Publication (422.53 KB)
DescriptionMicroelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by efforts to remove halogens. One result of this cycle and materials changes is new modes of device failure that lead root cause investigations back to the basics of chip fabrication (fab) and packaging processes and materials. Herein is presented the root cause analysis of a current leakage failure where ionic content in a non-halogen containing epoxy molding compound is shown to be the cause.
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CitationSchueneman, Gregory T.; Kingsbury, Jeffery; Klinkerch, Edmund. 2011. Investigation of “benign” ionic content in epoxy that induces microelectronic device failure. In: Proceedings of the 34th annual meeting of the Adhesion Society, 2011 February 13-16, Savannah, GA. Blacksburg, VA : The Adhesion Society, 2011: 3 p.
KeywordsGlues, adhesion, adhesives, epoxy resins, epoxy compounds, microelectronics, molding materials, ions, semiconductors, metal oxide semiconductors, transistors, gluing, durability, failure, bond strength, bonding, strength, leakage
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