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    Author(s): Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen
    Date: 2015
    Source: ACS Applied Materials & Interfaces
    Publication Series: Scientific Journal (JRNL)
    Station: Forest Products Laboratory
    PDF: Download Publication  (992.66 KB)


    We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol) substrates. These OFETs exhibit low operating voltage, low threshold voltage, an average field-effect mobility of 0.11 cm2/(V s), and good shelf and operational stability in ambient conditions. To improve the operational stability in ambient a passivation layer of Al2O3 is grown by atomic layer deposition (ALD) directly onto the CNC/glycerol substrates. This layer protects the organic semiconductor layer from moisture and other chemicals that can either permeate through or diffuse out of the substrate.

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    Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Liu, Jen-Chieh; Dindar, Amir; Choi, Sangmoo; Youngblood, Jeffrey P.; Moon, Robert J.; Kippelen, Bernard. 2015. Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates. ACS Applied Materials & Interfaces. 7(8): 4804-4808.


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    organic field-effect transistor, top-gate geometry, cellulose, low-voltage, ambient stability

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